Εισαγωγή στους Ηλεκτρονικούς Υπολογιστές - PDF

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Εισαγωγή στους Ηλεκτρονικούς Υπολογιστές 11 ο Μάθημα Λεωνίδας Αλεξόπουλος Λέκτορας ΕΜΠ URL: 1 Στα προηγούμενα μaθήματα

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Εισαγωγή στους Ηλεκτρονικούς Υπολογιστές 11 ο Μάθημα Λεωνίδας Αλεξόπουλος Λέκτορας ΕΜΠ URL: 1 Στα προηγούμενα μaθήματα Γλώσσες & Προγράμματα Εφαρμογών Γλώσσες Προγραμματισμού Λογισμικό: Σύνολο προγραμμάτων που μπορούν να εκτελεσθούν από τον Η/Υ Λειτουργικό Σύστημα Γλώσσα Μηχανής ΥλικόΤεχνικό: Σύνολο συσκευών που απαρτίζουν τον Η/Υ Μικρολειτουργίες & Μικροπρογραμματισμός Ψηφιακή Λογική 2 Στα προηγούμενα μaθήματα Αποκωδικοποίηση Κωδικοποίηση αριθμών και χαρακτήρων στο Δυαδικό Σύστημα. Αριθμητικές Πράξεις στο Δυαδικό Σύστημα Λογικές Πύλες Απλές και Παράγωγες Λογικές Πράξεις Πίνακας Αληθείας Κατασκευή κρυσταλλοτριόδου (Transistor) 3 Kρυσταλλοτρίοδος (Transistor) πύλη πηγή απαγωγός Για την ηλεκτρονική υλοποίηση κάθε πύλης χρειάζεται μικρός αριθμός (1 με 2) ηλεκτρονικών εξαρτημάτων τα οποία λέγονται τρανζίστορ (transistor). 4 Κατασκευή Transistor Clean Rooms Κατασκευή Transistor p-type n-type As B - Κατασκευή Transistor Κατασκευή Transistor n p n Polysilicon Metal p substrate n material O2 8 Transistor Cross-section n p n Polysilicon Metal S G D p substrate n material O2 0: Introduction Slide 9 Transistor Cross-section n p n Polysilicon Metal S G D p substrate n material O2 0: Introduction Slide 10 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 11 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires Grow O 2 on top of wafer C with O 2 in oxidation furnace 0: Introduction Slide 12 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 13 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF... 0: Introduction Slide 14 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires HF 0: Introduction Slide 15 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires Piranah 0: Introduction Slide 16 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 17 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires HF 0: Introduction Slide 18 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 19 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 20 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon Polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 21 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 22 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 23 Polysilicon Metal p substrate n material O2 Cover wafer with protective layer of O 2 (oxide) Spin photoresist n-well mask Etch oxide with hydrofluoric acid (HF!) Strip off remaining photoresist (Piranah!) Place wafer in furnace and heat until As atoms diffuse into exposed Strip off the remaining oxide using HF Deposit very thin layer of gate oxide Place wafer in furnace with lane gas (H 4 ) to form polysilicon polysilicon mask, etch oxide with HF Cover wafer with O 2 Etch with HF to expose contacts Sputter on aluminum over whole wafer and pattern to remove excess metal, leaving wires 0: Introduction Slide 24 Polysilicon Metal p substrate n material O2 Clean Rooms Fab for MEMS Fab for MEMS Fab for BIO-MEMS Fab for BIO-MEMS Manalis Lab, MIT
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